• Article  

      Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, Ioannis; Othonos, Andreas S.; Travlos, A.; Luculescu, C. R. (2015)
      Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
    • Article  

      Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Othonos, A.; Travlos, A.; Luculescu, C. R. (2015)
      Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...